Coherent and Tower Semiconductor demonstrate 400 Gbps-per-lane silicon modulator

Tower Semiconductor and Coherent announced a breakthrough demonstration of 400 Gbps-per-lane transmission through a silicon modulator built in a production-ready silicon photonics process. The setup paired Tower's platform with Coherent's InP continuous-wave high-power laser and showed an open eye at 420 Gb/s PAM4. The work targets 3.2T optical transceivers for pluggable and co-packaged optics designs.

• 400 Gbps per lane demonstrated over a silicon modulator.
• Open eye at 420 Gb/s PAM4.
• Uses Coherent's InP CW high-power laser with Tower's silicon photonics process.
• Target: next-generation 3.2T transceivers, pluggable and co-packaged.