China's CXMT says its 4F² DRAM cell design will reach servers by year-end, rattling memory stocks

CXMT's chief executive said at the 4th Integrated Circuit and Chiplet Conference in Shanghai on October 9 to 10 that the company has made progress on a 4F² DRAM cell design using vertical surround gate transistors. The layout cuts cell area by about 33% versus the 6F² design that dominates production today, and CXMT plans server DDR5 RDIMM modules based on it by the end of 2026. CXMT has not disclosed specifications, process or yields, and analysts expect a gap before profitable production. SK hynix unveiled its own 4F² roadmap last year.

• Cell area: about 33% smaller than 6F²
• Target: server DDR5 RDIMM modules by year-end 2026
• Samsung targets 4F² mass production by 2028
• CXMT has not disclosed specs, process or yields