SK hynix board approves 54.3 trillion won for Yongin Y2 DRAM fab and Cheongju M17 NAND fab

SK hynix's board approved 35.2 trillion won for the Yongin Y2 fab, a DRAM plant that will make HBM and other next-generation DRAM, and 19.1 trillion won for the M17 NAND fab in Cheongju. Y2 breaks ground in July 2027 with its first cleanroom in June 2029, and M17 breaks ground in February 2027 with its first cleanroom in December 2028. The spending adds capacity mostly for 2028 and later, so the near-term effect is on capex and cash rather than current output.

• Yongin Y2 (DRAM, HBM): 35.2T won; first cleanroom June 2029
• Cheongju M17 (NAND): 19.1T won; first cleanroom December 2028
• Total approved: about 54.3T won
• Groundbreaking: M17 in February 2027, Y2 in July 2027